| PART |
Description |
Maker |
| CS218I-50PBLEADFREE CS218I-50DLEADFREE CS218I-50PL |
50 A, 1200 V, SCR, TO-218
50 A, 400 V, SCR, TO-218
50 A, 1000 V, SCR, TO-218
50 A, 800 V, SCR, TO-218
50 A, 200 V, SCR, TO-218
Internally Trimmed Precision IC Multiplier 55 A, 400 V, SCR, TO-218
Internally Trimmed Precision IC Multiplier 55 A, 1000 V, SCR, TO-218
63 A, 1200 V, SCR, TO-65
63 A, 600 V, SCR, TO-65
63 A, 200 V, SCR, TO-65
110 A, SCR, TO-83
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| BU808FI |
TRANSISTOR | BJT | DARLINGTON | NPN | 700V V(BR)CEO | 5A I(C) | TO-218 晶体管|晶体管|达林顿|叩| 700V的五（巴西）总裁| 5A条一（c）|218
|
EPCOS AG
|
| PPL0500B PPL1000B |
HEATSINK TO220/218 5.0C/W
HEATSINK TO220/218 3.1C/W 散热片TO220/218 3.1C /
|
Hamamatsu Photonics K.K.
|
| TIP142 TIP140 TIP147 |
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS
10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218
10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
|
http://
Central Semiconductor Corp
|
| M68779M |
Silicon MOS FET Power Amplifier, 218-250 MHz 7.0W FM Portable
Silicon MOS FET Power Amplifier / 218-250MHz 7.0W FM PORTABLE
Silicon MOS FET Power Amplifier, 218-250MHz 7.0W FM PORTABLE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BDV65A |
12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-218
|
CENTRAL SEMICONDUCTOR CORP
|
| SGSIF421 |
5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218
|
STMICROELECTRONICS
|
| BUT70 |
40 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-218
|
STMICROELECTRONICS
|
| SGSP461 STMICROELECTRONICS-SGSP462 |
20 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
|
STMICROELECTRONICS
|
| IRFP150FI |
26 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
|
STMICROELECTRONICS
|
|
