| PART |
Description |
Maker |
| MT5C1008C-30LL/MIL |
128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
|
Austin Semiconductor, Inc
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| KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM)的
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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| IS62LV1024 IS62LV1024LL IS62LV1024L IS62LV1024L-45 |
128K x 8 LOW POWER AND LOW Vcc 128K的8低功耗和低成本吓 128K*8 LOW POWER AND LOW Vcc CMOS STATIC RAM ASYNCHRONOUS STATIC RAM
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Samsung Semiconductor Co., Ltd. Glenair, Inc. N.A. ICSI[Integrated Circuit Solution Inc]
|
| MC3371 MC3371P MC3372 MC3372D MC3371D MC3371DTB MC |
LOW POWER FM IF LOW POWER FM IF FM, AUDIO SINGLE CHIP RECEIVER, PDIP16 (MC3372) LOW POWER FM IF - ContinuousShort Circuit Protection ( /P-Suffix)
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
| AT49BV001A AT49BV001A-55JI AT49BV001A-55TI AT49BV0 |
128K x 8 (1M bit), 2.7-Volt Read and Write, Top or Bottom Boot Parametric Block Flash. 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory 1-MEGABIT (128K X 8) SINGLE 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory AC 12C 12#12 SKT RECP JT 100C 100#22D SKT RECP AT49BV001A(N)(T) [Updated 9/03. 18 Pages] 128K x 8 (1M bit). 2.7-Volt Read and Write. Top or Bottom Boot Parametric Block Flash. AC 6C 3#16 3#4 SKT RECP Circular Connector; No. of Contacts:55; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No 1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 1兆位128K的8)单2.7伏电池电压⑩闪存 1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
| LC66356B LC662312A LC662316A LC66P2516 LC66516B LC |
Four-Bit Single-Chip Microcontrollers with 4, 6, and 8 KB of On-Chip ROM 四位单片机与4,6微控制器 KB的片上ROM Four-Bit Single-Chip Microcontrollers with 4/ 6/ 8/ 12/ and 16 KB of On-Chip ROM 4-Bit Microcontroller Microcontroller 微控制器 Four-Bit Single-Chip Microcontrollers with 4/6/and 8 Four-Bit Single-Chip Microcontrollers with 8 12 and 16 KB of On-Chip ROM Four-Bit Single-Chip Microcontrollers with 4 6 8 12 and 16 KB of On-Chip ROM Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM Four-Bit Single-Chip Microcontrollers with 4 6 and 8 KB of On-Chip ROM Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip EPROM Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip OTP PROM 12 and 16-kbyte on-chip ROM capacities CMOS 4-bit single-chip microcontrollers
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Sanyo Electric Co., Ltd. Eutech Microelectronics, Inc. SANYO[Sanyo Semicon Device] http://
|
| IS62LV1288LL IS62LV1288LL-45H IS62LV1288LL-45HI IS |
128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM 128K X 8 STANDARD SRAM, 55 ns, PDSO32 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM 128K X 8 STANDARD SRAM, 45 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http:// Maxwell Technologies, Inc
|
| M3062AFCVGP M30626FHPFP M30626FHPGP M30627FHPGP M3 |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K 4K bytes, RAM capacity = 31K bytes, Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K 4K bytes, RAM capacity = 20K bytes, Single-chip 16-bit CMOS microcomputer, ROM capacity = 96K bytes, RAM capacity = 5K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K bytes, RAM capacity = 4K bytes Single-chip 16-bit CMOS microcomputer, RAM capacity = 10K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes, Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K 4K bytes, RAM capacity = 4K bytes, Single-chip 16-bit CMOS microcomputer, RAM capacity = 4K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 512K 4K bytes, RAM capacity = 31K bytes, Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 16K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 24K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 31K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 31K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 24K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 16K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K bytes, RAM capacity = 20K bytes
|
Renesas
|
| IS62C1024L-35WI IS62C1024L-45WI |
35ns; 5V; 128K x 8 low-power CMOS static RAM 45ns; 5V; 128K x 8 low-power CMOS static RAM
|
ICSI
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