| PART |
Description |
Maker |
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| RMDA29000 |
29 GHz Driver Amplifier
27-31 GHz Drive Amplifier MMIC
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| T7024-TRS T7024 T7024-PGP T7024-PGQ T7024-TRQ |
The T7024 is a monolithic SiGe transmit/receive front-end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like Bluetooth and WDCT.
BluetoothISM 2.4-GHz Front- End IC
Bluetooth?ISM 2.4-GHz Front- End IC
Bluetooth⑩/ISM 2.4-GHz Front- End IC
Bluetooth/ISM 2.4-GHz Front- End IC
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| RFSP2020 PRFS-P2020-005 PRFS-P2020-006 PRFS-P2020- |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
Single-band power amplifiers
2.4-2.5 GHz Power Amplifier
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| XD1005-QT-EV1 XD1005-QT-0G00 MIMIXBROADBANDINC.-XD |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10.0-40.0千兆赫的GaAs MMIC分布式放大器QFN封装
|
Mimix Broadband, Inc.
|
| MA1046-1 |
CABLE SMA PLUG-PLUG HF-.141 4,1
For GHz - Power Amplifier
For 1.9 GHz - Power Amplifier
From old datasheet system
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AWB7123HM41P8 |
1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| CLT-13-6016 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
