| PART |
Description |
Maker |
| TC53257 TC53257F TC53257P |
256K BIT (32K WORD x 8 BIT) CMOS MASK ROM SILICON GATE MOS
|
Toshiba Semiconductor
|
| UPD43257BGU-70L-A UPD43257BGU-70LL-A UPD43257BGU-8 |
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| TC55VD836FF-150 TC55VD836FF-133 TC55VD836FF-143 |
256K Word x 36 Bit Synchronous No-turnround Static RAM(256K 字x36位同步无转向静RAM) 256K字36位同步无具体时间的静态RAM56K字x36位同步无转向静态内存）
|
Toshiba Corporation
Toshiba, Corp.
|
| KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LP62S2048AM-55LLT LP62S2048AM-70LLT LP62S2048A-T L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM
CAC 3C 3#12 PIN PLUG
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| LP62S2048A-I LP62S2048AM-55LLI LP62S2048AM-70LLI L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM
ER 22C 18#16 4#12 SKT PLUG
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| HYB514265BJ-45 HYB514265BJ-40 HYB514265BJ-400 HYB3 |
256K x 16-Bit EDO-Dynamic RAM 256K x 16位江户动态随机存储器
|
http://
SIEMENS AG
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| MCM72PB8ML3.5R MCM72PB8ML4 MCM72PB8ML4R MCM72FB8ML |
256K x 72 Bit Burst RAM Multichip Module 256K X 72 CACHE SRAM MODULE, 3.5 ns, PBGA209
256K x 72 Bit Burst RAM Multichip Module 256K X 72 CACHE SRAM MODULE, 4 ns, PBGA209
CAP CER 680PF 100V C0G 0603 256K X 72 CACHE SRAM MODULE, 7.5 ns, PBGA209
|
Motorola, Inc.
Electronic Theatre Controls, Inc.
Motorola Mobility Holdings, Inc.
|
