| PART |
Description |
Maker |
| CY7C1415BV18-250BZI CY7C1415BV18-167BZI |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1310BV18-167BZC CY7C1314BV18 CY7C1910BV18 CY7C |
18-Mbit QDR垄芒-II SRAM 2 Word Burst Architecture
18-Mbit QDR??II SRAM 2 Word Burst Architecture
18-Mbit QDR?II SRAM 2 Word Burst Architecture
|
Cypress Semiconductor
http://
|
| CY7C1413BV18-300BZXC CY7C1413BV18-300BZXI CY7C1413 |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture
36-Mbit QDR??II SRAM 4-Word Burst Architecture
36-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| R1Q4A3609ABG40RS0 R1Q6A3609ABG40RS0 R1Q3A3609ABG40 |
1M X 36 QDR SRAM, PBGA165
1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR?II SRAM 2-word Burst
36-Mbit QDR?⑸I SRAM 2-word Burst
36-Mbit QDR垄芒II SRAM 2-word Burst
|
http://
Renesas Electronics Corporation
|
| CY7C1315CV18-200BZC CY7C1315CV18-250BZC |
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18- |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构（2.0周期读写延迟
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1294DV18-167BZC CY7C1294DV18-167BZI CY7C1294DV |
9-Mbit QDR- II垄芒 SRAM 2-Word Burst Architecture
9-Mbit QDR- II SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI |
36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1561V18-333BZC CY7C1561V18-333BZI CY7C1563V18 |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
