| PART |
Description |
Maker |
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module
IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
| APTGT200SK60TG |
Buck chopper Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT200DH60G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT300H60G |
Full - Bridge Trench Field Stop IGBT Power Module 430 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT150DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 225 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT100A120TG |
Phase leg Fast Trench Field Stop IGBT Power Module 140 A, 1200 V, N-CHANNEL IGBT
|
Advanced Power Technology, Ltd.
MICROSEMI[Microsemi Corporation]
|
| BSM50GD120DN2G C67070-A2521-A67 050D12G2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| BSM25GD100 BSM25GD100D C67076-A2501-A2 |
IGBT MODULE 25 A, 1000 V, N-CHANNEL IGBT
IGBT MODULE IGBT模块
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
