| PART |
Description |
Maker |
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MH32S72PHB-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72BBFA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72BBFA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH32S72BBFA-8 MH32S72BBFA-7 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH32S72APHB-8 MH32S72APHB-6 MH32S72APHB-7 B00007 |
From old datasheet system
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
| MH32D64AKQJ-75 MH32D64AKQJ-10 |
2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| MH32D72AKLA-10 MH32D72AKLA-75 |
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
2 /415 /919 /104-BIT (33 /554 /432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MPR600006 MPR6000 |
Multi-Protocol RFID Reader Module EPC Class 0/0 Class1 and Gen2
|
WJCI[WJ Communication. Inc.]
|
|
