| PART |
Description |
Maker |
| W7MG1M32SVT90BNI |
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module
|
White Electronic Designs Corporation
|
| M29W640DT M29W640DT90ZA6T M29W640DB M29W640DB70N1E |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LW064D |
64 Mbit (8Mb x8 / 4Mb x16 / Uniform Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| M29W640FT M29W640FB M29W640FB60N6E M29W640FB60N6F |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
STMicroelectronics
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| M29W640FT60ZA6E M29W640FT60ZA6F M29W640FT70ZA6E M2 |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
STMicroelectronics
|
| IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM)
4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
| GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM
10ns 256K x 16 4Mb asynchronous SRAM
12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
| WF1M32B-100G2TI3 WF1M32B-100HC3 WF1M32B-100HC3A WF |
1MX32 3.3V FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
