| PART |
Description |
Maker |
| RFP-250375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| 04023J0R1PBWTR 06035J1R8BBTTR 02011J4R7CASTR 06033 |
CAP CERAMIC .1PF 25V 0402 RF SMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000001 uF, SURFACE MOUNT, 0402
CAP CERAMIC 1.8PF 50V 0603 RFSMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 50 V, 0.0000018 uF, SURFACE MOUNT, 0603
Thin-Film Technology
Thin-Film RF/Microwave Capacitors
|
AVX, Corp.
AVX Corporation
|
| NPT1007 NPT1007-15 |
Gallium Nitride 28V, 200W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| MFE201 MFE202 MFE203 |
N-CHANNEL DUAL-GAE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Motorola, Inc
|
| MFE211 MFE212 |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
Digitron Semiconductors
|
| NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
List of Unclassifed Man...
|
