| PART |
Description |
Maker |
| PIC18F25K20 PIC18F45K20 PIC18F24K20 PIC18F46K20 PI |
Flash Memory Programming Specification
|
Microchip Technology
|
| MAX662A MAX662ACPA MAX662ACSA MAX662AEPA MAX662AES |
12V, 30mA Flash Memory Programming Supply
12V 30mA Flash Memory Programming Supply
12V / 30mA Flash Memory Programming Supply
Quadruple 2-Input Exclusive-OR Gates 14-CDIP -55 to 125
Decade Counter 14-CDIP -55 to 125 SWITCHED CAPACITOR REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDIP8
Quadruple 2-Input Exclusive-OR Gates 14-CFP -55 to 125 SWITCHED CAPACITOR REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDIP8
|
Maxim Integrated Produc...
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| PIC16F87 PIC16F88 |
PIC16F87/88 FLASH Memory Programming Specification
|
Microchip Technology
|
| MX10E8050IA MX10E8050IAQC MX10E8050IPC MX10E8050IQ |
On-chip Flash program memory with in-system programming
|
MCNIX[Macronix International]
|
| ST662ACD-TR ST662ABD-TR |
DC-DC converter from 5V to 12V, 0.03A for flash memory programming supply
|
STMicroelectronics
|
| PIC1845K50 PIC184XK50 PIC18F45K50 PIC18F24K50 PIC1 |
28/40/44-Pin, Low-Power, High-Performance Microcontrollers with XLP Technology
Flash Memory Programming Specification
|
Microchip Technology
|
| ATMEGA8 ATMEGA8L |
8-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, 6 or 8 Channel 10-bit A/D-converter. Up to 16 MIPS throughput at 16 Mhz.
8-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, 6 or 8 Channel 10-bit A/D-converter. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation
|
Atmel
|
| ATMEGA16L |
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, 8 Channel 10-bit A/D-converter.
|
ATMEL
|
| ATMEGA128 ATMEGA128L |
128-Kbyte self-programming Flash Program Memory, 4-Kbyte SRAM, 4-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 Mhz.
128-Kbyte self-programming Flash Program Memory, 4-Kbyte SRAM, 4-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation.
|
Atmel
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| ATMEGA1280 ATMEGA640 |
128-Kbyte self-programming Flash Program Memory, 8-Kbyte SRAM, 4-KByte EEPROM, 16 Channel 10-bit A/D
ATmega640/1280/1281/2560/2561 Advance Information Summary
|
ATMEL
|
| PHT4N10T |
12V, 30mA Flash Memory Programming Supply; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
Microsemi, Corp.
|
