| PART |
Description |
Maker |
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| 2SK2545 |
FET Silicon N Channel Mos Type(for High speed, High Voltage Switching)
|
TOSHIBA[Toshiba Semiconductor]
|
| HIP4080A HIP4080AIB HIP4080AIP |
80V/2.5A Peak, High Frequency Full Bridge FET Driver 80V/2.5A峰值，高频全桥FET驱动
30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
80V/2.5A Peak/ High Frequency Full Bridge FET Driver
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FLL21E004ME |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E040IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL400IK-2 |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL400IK-2C |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
