| PART |
Description |
Maker |
| M5002_0611 M5002 M500216RDK M500216RDK-R M500216RL |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPXO
|
MTRONPTI[MTRONPTI]
|
| M50021DTDK-R M500278TLK-R |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPXO
|
MTRONPTI
|
| M8R_0611 M8R M8R11FAJ M8R11FAJ-R M8R11FCJ M8R11FCJ |
9x16 mm, 3.3 Volt, HCMOS/TTL, Clock Oscillator
|
MTRONPTI[MTRONPTI]
|
| M50026ETLK M50026ETLK-R |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPXO 9x16毫米的FR - 4.0伏，路CMOS / TTL / PECL LVDS的，HPXO
|
MtronPTI
|
| IDT72V36104 IDT72V36103 IDT72V3694 IDT72V3693 |
3.3 VOLT CMOS SyncBiFIFO?
3.3 VOLT CMOS SyncFIFO?
|
IDT
|
| IDT72V3642L10PF IDT72V3642L10PQF IDT72V3632 IDT72V |
TV 100C 100#22D SKT PLUG
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 3.3伏的CMOS SyncBiFIFO 256 × 36 × 2 512 × 36 × 2 1024 × 36 × 2
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| S29CD016J1JFAM033 S29CD016J1JFAM133 S29CD016J0JFAM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 32/16兆位的CMOS 2.6伏或3.3伏，只有同时写，双启动，突发模式闪存记忆体与VersatileI /输出
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM29LV008BB70REIB AM29LV008BT70REIB AM29LV008BB-80 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1米8位）的CMOS 3.0伏，只引导扇区闪
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位米8位）的CMOS 3.0伏，只引导扇区闪
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
HDWR ENDCAP RIGHT FOR SER 3U BLK
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
http://
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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