| PART |
Description |
Maker |
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| APT10025JVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| IRLML0100TRPBF-1 |
100V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
|
International Rectifier
|
| IRF7607 IRF7607TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
|
International Rectifier
|
| IRLML5103TRPBF |
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
|
International Rectifier
|
| IRLML5203TRPBF-1 |
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
|
International Rectifier
|
| IRF7606TR |
-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
|
International Rectifier
|
| IRLMS6802 IRLMS6802TR |
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| IRLMS5703 IRLMS5703TR |
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| HGTG20N120 HGTG20N120E2 G20N120 |
34A/ 1200V N-Channel IGBT
34A, 1200V N-Channel IGBT
|
INTERSIL[Intersil Corporation]
|
| MAX153CPPCGP |
1Msps, µP Compatible, 8-Bit ADC with 1µA Power Down
|
MAXIM - Dallas Semiconductor
|
| 34A-020 34A-050 34A-040 34A-030 |
(34A-xxx) Digital Delay Modules
|
Newport Components
|
