| PART |
Description |
Maker |
| GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM 1.8V 2M x 9 QDR II PipeLined SRAM 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 2M x 8 QDR II Pipelined SRAM 18Mb Pipelined QDR II SRAM Burst of 4
|
IDT http://
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM 512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
| GS8160Z36BGT-250IV GS8160Z18BGT-200IV GS8160Z18BT- |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8162Z72CC-150V GS8162Z72CC-150IV GS8162Z72CGC-20 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209 18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8160ZV18CT-333I GS8160ZV36CGT-333I GS8160ZV18CGT |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 4.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 4.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8160ZV18CT-333 GS8160ZV18CT-333I GS8160ZV18CT-30 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| IS61LPS25672A-250B1 IS61LPS25672A-250B1I IS61LPS10 |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 3.1 ns, PBGA165 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc. MEAN WELL Enterprises Co., Ltd.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc. EPCOS AG
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM 1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|