| PART |
Description |
Maker |
| CY7C09269V-12AC CY7C09289V-9AI CY7C09379V-12AC CY7 |
Memory : Dual-Ports
True Dual-Ported memory cells which allow simultaneous access of the same memory location
3.3V 16K/32K/64K x16/18 Synchronous Dual-Port Static RAM
3.3V 16K/32K/64K x 16/18 Synchronous Dual-Port Static RAM
SYNC SRAM|32KX18|CMOS|QFP|100PIN|PLASTIC
SYNC SRAM|64KX16|CMOS|QFP|100PIN|PLASTIC
SYNC SRAM|32KX16|CMOS|QFP|100PIN|PLASTIC
SYNC SRAM|16KX16|CMOS|QFP|100PIN|PLASTIC
SYNC SRAM|16KX18|CMOS|QFP|100PIN|PLASTIC 同步静态存储器| 16KX18 |的CMOS | QFP封装| 100引脚|塑料
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
|
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8321V36E-133 GS8321V36E-133I GS8321V36E-166I GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 200万1800万3200万36同步突发静态存储器分配36MB
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 6.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 6.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| GS864436B-166I GS864472C-166 GS864418B-150I GS8644 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS88032AT-166 GS88018AT-166 GS88036AT-166 GS88032A |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 1856K × 3256K × 36 9Mb以上同步突发静态存储器
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 18256K × 32256K × 36 9Mb以上同步突发静态存储器
|
Electronic Theatre Controls, Inc.
|
| GS832118E-150IV GS832118E-133IV GS832118E-133V GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8320E18T-V GS8320E36T-225 GS8320E18GT-133 GS8320 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
http://
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