| PART |
Description |
Maker |
| HWC30NC |
C-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
| HWC27NC |
C-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
| HWL34NC |
L-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
| HWL27NC |
L-Band Power FET Via Hole Chip
|
Hexawave, Inc
|
| MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY
L /S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
LS BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HWL30NC |
L-Band Power FET Non-Via Hole Chip
|
Aimtron Technology Corp.
|
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册，S波段功率GaAs场效应晶体管
0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC[NEC]
|
| NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
| FLX207MH-12 |
X, Ku Band Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
