| PART |
Description |
Maker |
| 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORAT |
Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| NTE1317 |
50 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM18
Integrated Circuit Module, 2 Power, 2 Channel, AF Power Amplifier, 50W Min.
|
NTE[NTE Electronics]
|
| FDFS2P753AZ |
Integrated P-Channel PowerTrenchMOSFET and Schottky Diode -30V, -3A, 115m 3 A, 30 V, 0.115 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| 2SK168 2SK168E 2SK168D 2SK168F |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR|JFET|N-CHANNEL|8MA I(DSS)|TO-92
TRANSISTOR|JFET|N-CHANNEL|20MA I(DSS)|TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 12mA的我（直）|2
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| FDFC2P100 |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm 3 A, 20 V, 0.252 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| MMPF0200F0AEP |
12 channel configurable power management integrated circuit
|
NXP Semiconductors
|
| ACT8701 |
Four Channel Integrated Power Management IC for Handheld Portable Equipment
|
Active-Semi, Inc
|
| ACT8700 |
Four Channel Integrated Power Management IC for Handheld Portable Equipment
|
Active-Semi, Inc
|
| ACT8342 |
Three-Channel Integrated Power Management IC for Handheld Portable Equipment
|
Active-Semi, Inc
|
|
