| PART |
Description |
Maker |
| FDFMA2P85308 FDFMA2P853 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| 2SK168 2SK168E 2SK168D 2SK168F |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR|JFET|N-CHANNEL|8MA I(DSS)|TO-92
TRANSISTOR|JFET|N-CHANNEL|20MA I(DSS)|TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 12mA的我（直）|2
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| 2SK2142 2SK1884 2SK1893 2SJ269 2SK1892 2SK1885 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 22A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 9A条（丁）|20CI
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 16A条（丁）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 5.5AI（四）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 7A条（丁）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 8A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-220AB
|
Molex, Inc.
Sanyo Electric Co., Ltd.
|
| FDFC2P100 |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm 3 A, 20 V, 0.252 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| 2SK2642-01MR |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
N-CHANNEL SILICON POWER MOS-FET
|
FUJI[Fuji Electric]
|
| 2SK2080-01R 2SK2080-0IR |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
N-CHANNEL SILICON POWER MOS-FET
|
Opto 22
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| NTE1331 |
Integrated Circuit Module - Dual, Audio Power Amplifier, 25W/Channel, 2 Power Supplies Required
Integrated Circuit Module - Dual / Audio Power Amplifier / 25W/Channel / 2 Power Supplies Required
|
NTE[NTE Electronics]
|
| ACT8796 |
Six Channel Integrated Power Management IC for Handheld Portable Equipment
|
Active-Semi, Inc
|
| NTLLD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel
|
ON Semiconductor
|
| ACT8706 |
Four Channel Integrated Power Management IC for Handheld Portable Equipment
|
Active-Semi, Inc
|
| ACT8332 |
Three-Channel Integrated Power Management IC for Handheld Portable Equipment
|
Active-Semi, Inc
|
