| PART |
Description |
Maker |
| BPT-BP0334 |
SILICON PHOTO TRANSISTORS SPECIFICATION
|
BRIGHT LED ELECTRONICS CORP
|
| ST-309 |
Photo transistors(high-sensitivity Silicon phototransistor)
|
KODENSHI CORP.
KODENSHI[KODENSHI KOREA CORP.]
Kondenshi Corp
|
| ST-1KB ST-1KA |
(ST-1KA/B) Photo transistors(high-sensitivity NPN silicon phototransistors mounted in durable)
|
Kondenshi Corp
KODENSHI[KODENSHI KOREA CORP.]
KODENSHI CORP.
|
| Q62702-P1702 Q62702-P1822 SFH507 SFH507-30 SFH507- |
IR-Receiver for Remote Control System...
From old datasheet system
PNP SILICON AF TRANSISTORS
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching)
IR-Empfanger fur Fernbedienungen fur kurze Burst IR-Receiver for Remote Control Systems for Short Burst LOGIC OUTPUT PHOTO DETECTOR
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BC414 BC413 BC416 BC415 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
SILICON PLANAR EPITAXIAL TRANSISTORS
|
Micro Electronics
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| TSOP34830XG1 |
Photo IC, LOGIC OUTPUT PHOTO DETECTOR, LEAD FREE, PLASTIC PACKAGE-3
|
Vishay Semiconductors
|
| TSOP4456SJ1 |
Photo IC, LOGIC OUTPUT PHOTO DETECTOR, LEAD FREE, PLASTIC PACKAGE-3
|
Vishay Semiconductors
|
| TSOP34830B |
Photo IC, LOGIC OUTPUT PHOTO DETECTOR, LEAD FREE, PLASTIC PACKAGE-3
|
Vishay Semiconductors
|
| TSOP58333 |
Photo IC, LINEAR OUTPUT PHOTO DETECTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
Vishay Semiconductors
|
| TSOP4840SS1BS12 |
Photo IC, LOGIC OUTPUT PHOTO DETECTOR, LEAD FREE, PLASTIC PACKAGE-3
|
Vishay Semiconductors
|
