| PART |
Description |
Maker |
| RN4606 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN4607 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| XN04322G |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
Panasonic
|
| XN0A312G |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
Panasonic
|
| DMG964010R |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
| NP043A2 |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| UP04314 |
Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| RN4602 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| RT1A3906-T122 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
|
Isahaya Electronics Cor...
Isahaya Electronics Corporation
|
