| PART |
Description |
Maker |
| TLN11707 TLN117F |
INFRARED LED GAAS INFRAED EMITTER 红外发光二极管公认审INFRAED发射
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP828 |
Photo-interrupter Which incorporates a GaAs infrared LED and a fast response Si Phototransistor in a Dust-proof package.
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| Q62703-Q1031 LD274 Q62703-Q1820 LD274-2 LD274-3 Q6 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| STS7103 |
Infrared LED, 3.9 mm, 1 ELEMENT, INFRARED LED, 950 nm, HERMETIC SEALED, TO-18, 2 PIN
|
Vishay Semiconductors
|
| SID1050CM SID1050M |
Infrared LED Lamp
5PHI ROUND INFRARED LED (DIRECT MOUNT)
|
Sanken electric
|
| TSUS520 |
GaAs Infrared Emitting Diodes in ?5 mm (T-13/4)Package
GaAs Infrared Emitting Diodes in 庐5 mm (T-13/4)Package
GaAs Infrared Emitting Diodes in ?5 mm (T-13/4)Package
From old datasheet system
|
Vishay Siliconix
|
| LD271 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor Group
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
