PART |
Description |
Maker |
A29L008UV-90 A29L008TV-90U A29L008TV-90 A29L008TV- |
90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory 1M X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory From old datasheet system
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AMICC[AMIC Technology]
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29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD DIODE SCHOTTKY 45V 2X20A TO247AD MOSFET N-CH 500V 14A TO-247AD Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32 MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
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AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta DB25SC37 DSUB 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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CAT28F001 CAT28F001P-12BT CAT28F001TI-70BT CAT28F0 |
90ns 1M-bit CMOS boot block flash memory 70ns 1M-bit CMOS boot block flash memory 150ns 1M-bit CMOS boot block flash memory 120ns 1M-bit CMOS boot block flash memory 120ns 1M-bit CMOS Boot Block Flash Memory 1 Megabit CMOS Boot Block Flash Memory
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CATALYST[Catalyst Semiconductor]
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MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 x8 Flash EEPROM x8闪存EEPROM
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Macronix International Co., Ltd.
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AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只,同时作业快闪记忆
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Advanced Micro Devices, Inc. http://
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AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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EN29LV640U EN29LV640U-70R EN29LV641H EN29LV641H-70 |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
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Eon Silicon Solution Inc. ETC
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M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP From old datasheet system
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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AM29LV008BB70REIB AM29LV008BT70REIB AM29LV008BB-80 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1米8位)的CMOS 3.0伏,只引导扇区闪 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位米8位)的CMOS 3.0伏,只引导扇区闪 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 HDWR ENDCAP RIGHT FOR SER 3U BLK 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc. http://
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EN29LV320B-70TC EN29LV320T-70TC EN29LV320B-70BCP E |
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 32兆位096K × 8 2048K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
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Electronic Theatre Controls, Inc. Eon Silicon Solution, Inc.
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AM29LV081B AM29LV081B-120EC AM29LV081B-120ECB AM29 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory Gate Driver; Package: PG-DSO-8; RthJA (max): -; 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位米8位)的CMOS 3.0伏特,只有扇区擦除闪 CORECONTROL™ Gate Driver 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位1米8位)的CMOS 3.0伏特,只有扇区擦除闪
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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