| PART |
Description |
Maker |
| TH50VSF3582AASB TH50VSF3583AASB |
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TH50VSF3582AASB |
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| MMDT2227 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 585-2325 585-2225 585-2211 585-2413 585-2415 585-2 |
Multi-Chip BASED LED T 1 3/4 Wedge
BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation
Dialight PLC
|
| UMD2N |
NPN-PNP built-in resistors Multi-Chip Digital Transistor
|
SeCoS
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| SP506 |
Multi-Protocol Serial Transceivers
5V / Single Chip WAN Multi-Mode Serial Transceiver
|
Sipex
|
| S73WS-P S75WS256NDGBFWLH2 S75WS256NDGBFWLH0 S75WS2 |
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion Inc.
Spansion, Inc.
|
