| PART |
Description |
Maker |
| SPLMY81S9 |
Passively Cooled Diode Laser Bar, 140 W cw at 808 nm
|
OSRAM GmbH
|
| SPLLG98-P |
Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 975nm
Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 975nm
|
OSRAM GmbH
|
| SPLLG91-P |
Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 915nm
Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 915nm
|
OSRAM GmbH
|
| SPLE20N81G2 |
Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm
|
OSRAM GmbH
|
| SPLLG81-P |
Passiv gekuhlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 808nm
Passiv gekuhlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 808nm
|
OSRAM GmbH
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| C484 |
(C48x) 2.5 G-Bits Cooled Laser Transmitters
|
Agere Systems
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
