| PART |
Description |
Maker |
| RD06HVF1-101 RD06HVF1 |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers
|
TOSHIBA
|
| BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CA2830C CA2830 |
RF/Coaxial Connector; RF Coax Type:N; Contact Termination:Crimp or Solder; Impedance:50ohm; Body Style:Straight Plug; RG Cable Type:9, 9A, 9B, 214
34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS
|
Motorola, Inc.
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| BFP280 Q62702-F1378 |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管（对于低噪音，在移动通信系统的低功耗放大器
NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HTT1115S |
High Frequency Amplifiers(Twin Type)
|
Hitachi Semiconductor
|
| 10A8DD 10A8DDX |
PWM BRUSH TYPE SERVO AMPLIFIERS
|
ETC
List of Unclassifed Manufacturers
|
| 2SA965 2SA965O 2SA965Y |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TOSHIBA[Toshiba Semiconductor]
|
