| PART |
Description |
Maker |
| BAC40C-806-01 BAC40C-806-02 |
40W 806nm 30% Fill Factor High Power Laser Diode Bar on Microchannel Cooler
|
Bookham, Inc.
|
| PEEL173 |
IC,SIMPLE-EEPLD,PLA-TYPE,CMOS,DIP,24PIN,PLASTIC
|
ami
|
| BAC110C-1030-01 BAC110C-1030-02 BAC110C |
110W 10xxnm High Power Laser Diode Bar on Microchannel Cooler
|
Bookham, Inc.
|
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
| TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
