| PART |
Description |
Maker |
| 218MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 6 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC147S801 HMC147S8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.6 - 3.4 GHz
|
Hittite Microwave Corporation
|
| HMC170C806 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 2.5 - 4 GHz
|
Hittite Microwave Corporation
|
| 208AMS8E HMC208AMS8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 0.7 - 2.0 GHz
|
http://
Hittite Microwave Corporation
|
| HMC128G806 HMC128G8-06 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.8 - 5 GHz
|
Hittite Microwave Corpo...
Hittite Microwave Corporation
|
| 207S8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 0.7 - 2.0 GHz
|
美国讯泰微波有限公司上海代表
|
| 175MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.7 - 4.5 GHz
|
Hittite Microwave Corporation
|
| 351S8E |
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC316MS8 |
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER/ 1.5 - 3.5 GHz
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 1.5 - 3.5 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC438MS8G |
SMT GaAs HBT MMIC DIVIDE-BY-5, DC - 7.0 GHz
SMT GaAs HBT MMIC DIVIDE-BY-5/ DC - 7.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
