| PART |
Description |
Maker |
| M6MGT641S8BKT M6MGB641S8BKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| M6MGD137W34DKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| F6589 |
ULTRA THIN MCP ASSEMBLY WITH CENTER HOLE
|
HAMAMATSU[Hamamatsu Corporation]
|
| S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品（MCP）的512兆位2兆16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
|
| AM49DL320BGB701T AM49DL320BGT701T AM49DL320BGT701S |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装（MCP）闪存和SRAM2兆位个M × 8 2米x 16位）.0伏的CMOS只，同时
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装（MCP）闪存和SRAM2兆位4个M × 8 2米x 16位）.0伏的CMOS只，同时
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion, Inc.
Spansion Inc.
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| MB84VD22181FM-70 MB84VD22191FM-70 |
2-Stacked MCP
|
Fujitsu
|
| K522H1HACF-B050 |
MCP Specification
|
Samsung semiconductor
|
| 1851342 |
FK-MCP 1,5/13-STF-3,81
|
Phoenix Contact
|
| KA100O015E-BJTT |
MCP Specification
|
Samsung semiconductor
|
| K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5 |
MCP MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| WF1M32B-XHX3 WF1M32B-XG2TX3 |
Flash MCP 闪存MCP
|
OKI SEMICONDUCTOR CO., LTD.
|
