| PART |
Description |
Maker |
| CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler CGD982HCI<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| LD7215 LD7215C LD7215D |
6 GHz / 3 kW / HELIX TYPE / PPM FOCUSING / HIGH POWER GAIN / FLAT GAIN VARIATION
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION 6千兆赫，3千瓦，螺旋式，分之为重点，高功率增益平坦增益变化
|
NEC Corp.
NEC, Corp.
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| CGD1044H09 CGD1044H |
1 GHz, 25 dB gain high output power doubler
|
NXP Semiconductors
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SST12LP19E-NR |
2.4 GHz High-Gain, High-Efficiency Power Amplifier
|
Microchip Technology
|
| AMMP-5620 |
6 - 20 GHz High Gain Amplife
|
AVAGO TECHNOLOGIES
|
| HMMC-5620 |
6-20 GHz High-Gain Amplifier
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| RFMA1720-1W-Q7 |
17.7 - 19.7 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA1415-1W-Q7 |
14.4 - 15.4 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
