| PART |
Description |
Maker |
| S3904-1024F S3904-512F S3904-F |
NMOS linear image sensor
|
Hamamatsu Corporation
|
| TCD1304AP |
CCD LINEAR IMAGE SENSOR The TCD1252AP is a high sensitive and low dark current 3648 - elements linear image sensor.
|
TOSHIBA
|
| C8225-01 C8225-02 C8225 |
Pulse generator for NMOS linear image sensor driver circuit
XTAL CER SMT 6X3.5 2PAD
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| TCD1503D |
CCD LINEAR IMAGE SENSOR The TCD1503D is a high sensitive and low dark current 5000 elements CCD image sensor.
|
TOSHIBA
|
| TCD1501D |
CCD LINEAR IMAGE SENSOR The TCD1501D which includes sample .and .hold circuit is a high sensitive and low dark current 5000 elements CCD image sensor.
|
TOSHIBA
|
| S10227 |
CMOS linear image sensor Small plastic package CMOS image sensor
|
Hamamatsu Corporation
|
| TCD2561D |
The TCD2561D is a high sensitive and low dark current 5340 elements 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit.
TOSHIBA CCD Linear Image Sensor CCD (charge coupled device)
|
TOSHIBA[Toshiba Semiconductor]
|
| G9202 G9202-512R G9202-512S G9201-256R G9201-256S |
InGaAs linear image sensor
InGaAs linear image sensor 铟镓砷线性图像传感器
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| G9208-256W G9206-256W |
InGaAs linear image sensor
|
Hamamatsu Corporation
|
| G920106 G9204-512D G9204-512S |
InGaAs linear image sensor
|
Hamamatsu Corporation
|
| G921105 G9205-256W |
InGaAs linear image sensor
|
Hamamatsu Corporation
|
