| PART |
Description |
Maker |
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS352TPH3 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| L1SS226LT1G-15 |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| 1SS196 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS190 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS387 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS30807 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS19007 1SS190 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS301TE85LF |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS38207 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS361F |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
