| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| GT8G134 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G101SM06 GT25G101SM |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| FGR15N40A |
Strobe Flash N-Channel Logic Level IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT20G101 E001912 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60D2DPE-00-J3 RJH60D2DPE |
20 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3
Silicon N Channel IGBT Application: Inverter
|
NXP Semiconductors N.V.
Renesas Electronics Corporation
|
| RJH60C9DPD-00-J2 RJH60C9DPD |
10 A, 600 V, N-CHANNEL IGBT SC-63, DPAK-3
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| CY25CAH-8F CY25CAH-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4301APP-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4009ANS RJP4009ANS-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
