| PART |
Description |
Maker |
| 2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC3072 E000784 |
From old datasheet system
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA143006 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA116009 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1300 2SA130007 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SA1357 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| GT5G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT8G13106 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
