| PART |
Description |
Maker |
| 1N5223BT50R 1N5231BTR 1N5231BT26A 1N5231BT50A 1N52 |
surface mount silicon Zener diodes 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
16V, 0.5W Zener Diode
33V, 0.5W Zener Diode
12V, 0.5W Zener Diode
13V, 0.5W Zener Diode
10V, 0.5W Zener Diode
25V, 0.5W Zener Diode
22V, 0.5W Zener Diode
30V, 0.5W Zener Diode
15V, 0.5W Zener Diode
27V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
11V, 0.5W Zener Diode
6.0V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
8.7V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.3V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
3.6V, 0.5W Zener Diode
2.4V, 0.5W Zener Diode
3.3V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
5.1V, 0.5W Zener Diode
2.7V, 0.5W Zener Diode
14V, 0.5W Zener Diode
18V, 0.5W Zener Diode
20V, 0.5W Zener Diode
24V, 0.5W Zener Diode
19V, 0.5W Zener Diode
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Fairchild Semiconductor, Corp.
|
| 1N5232A 1N5221A 1N5221B 1N5221C 1N5221D 1N5270B 1N |
22 V, 5.6 mA, zener diode
13 V, 9.5 mA, zener diode
36 V, 3.4 mA, zener diode
3.3 V, 20 mA, zener diode
30 V, 4.2 mA, zener diode
15 V, 8.5 mA, zener diode
8.7 V, 20 mA, zener diode
2.5 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
3.3 V, 20 mA, zener diode
19 V, 6.6 mA, zener diode
33 V, 3.8 mA, zener diode
56 V, 2.2 mA, zener diode
11 V, 20 mA, zener diode
28 V, 4.5 mA, zener diode
24 V, 5.2 mA, zener diode
60 V, 2.1 mA, zener diode
60 V, 2.1 mA, zener diode
39 V, 3.2 mA, zener diode
39 V, 3.2 mA, zener diode
17 V, 7.4 mA, zener diode
14 V, 9.0 mA, zener diode
12 V, 20 mA, zener diode
18 V, 7.0 mA, zener diode
5.6 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
87 V, 1.4 mA, zener diode
4.7 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
7.5 V, 20 mA, zener diode
110 V, 1.1 mA, zener diode
2.8 V, 20 mA, zener diode
24 V, 5.2 mA, zener diode
28 V, 4.5 mA, zener diode
25 V, 5.0 mA, zener diode
1N52 SERIES ZENER DIODES
FKC 2.5/6-STF
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
2.5 V, 20 mA, zener diode
36 V, 3.4 mA, zener diode
9.1 V, 20 mA, zener diode
11 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
110 V, 1.1 mA, zener diode
3.9 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
16 V, 7.8 mA, zener diode
12 V, 20 mA, zener diode
3.9 V, 20 mA, zener diode
43 V, 3.0 mA, zener diode
68 V, 1.8 mA, zener diode
68 V, 1.8 mA, zener diode
56 V, 2.2 mA, zener diode
30 V, 4.2 mA, zener diode
43 V, 3.0 mA, zener diode
6.2 V, 20 mA, zener diode
3.0 V, 20 mA, zener diode
33 V, 3.8 mA, zener diode
14 V, 9.0 mA, zener diode
8.2 V, 20 mA, zener diode
2.8 V, 20 mA, zener diode
6.8 V, 20 mA, zener diode
75 V, 1.7 mA, zener diode
10 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
75 V, 1.7 mA, zener diode
51 V, 2.5 mA, zener diode
100 V, 1.3 mA, zener diode
8.7 V, 20 mA, zener diode
22 V, 5.6 mA, zener diode
|
LRC[Leshan Radio Company]
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| 1N964B 1N991B 1N957B 1N957B_04 1N958B 1N959B 1N960 |
15V, 0.5W Zener Diode
33V, 0.5W Zener Diode
10V, 0.5W Zener Diode
12V, 0.5W Zener Diode
22V, 0.5W Zener Diode
18V, 0.5W Zener Diode
16V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
Half Watt Zeners
Zeners General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| CMS1006 CMS10 CMS10-06 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.5 to 14.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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Toshiba Semiconductor
Toshiba Corporation
|
| 1N759A 1N4370A 1N4371A 1N4372A 1N746A 1N747A 1N748 |
Zeners
10V, 0.5W Zener Diode
12V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
3.6V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.3V, 0.5W Zener Diode
3.3V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
5.1V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| 1M110ZS10 1M120ZS10 1M130ZS10 1M150ZS10 1M160ZS10 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 1% tolerance.
1.0 WATT SURMETIC 30 SILICON ZENER DIODES
4 PR #24 DATATWIST PVC
1701A CMP 4BP24 BK 1000F REELEX
1701A CMP 4BP24 GY 1000F SP 1.0瓦SURMETIC 30硅稳压二极管
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -2% tolerance.
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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意法半导
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| DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD Epitaxial Planar Type
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 1N6268A 1N6268ARL4 1N6270ARL4 1N6269A 1.5KE220ARL4 |
Zener 7.5V 1500W 5%
Zener 9.1V 1500W 5%
Zener 8.2V 1500W 5%
1500 Watt Mosorb™ Zener Transient Voltage Suppressors
Zener 20V 1500W 5%
Zener 6.8V 1500W 5%
Zener 27V 1500W 5%
Zener 130V 1500W 5%
Zener 12V 1500W 5%
Zener 56V 1500W 5%
Zener 33V 1500W 5%
Zener 150V 1500W 5%
Zener 51V 1500W 5%
Zener 91V 1500W 5%
Zener 82V 1500W 5%
Zener 16V 1500W 5%
Zener 18V 1500W 5%
Zener 24V 1500W 5%
Zener 30V 1500W 5%
Zener 36V 1500W 5%
Zener 43V 1500W 5%
Zener 120V 1500W 5%
Zener 68V 1500W 5%
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ON Semiconductor
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