| PART |
Description |
Maker |
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| PC48F4400P0VB0EE PC48F4400P0VB0EF RC28F256P30BFE R |
256Mb and 512Mb (256Mb/256Mb), P30-65nm
256Mb and 512Mb (256Mb/256Mb), P30-65nm
|
Micron Technology
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| EM488M3244VBB EM48AM3244VBB-75FE EM48AM3244VBB-7FE |
256Mb (2M?4Bank?32) Synchronous DRAM
256Mb (2M隆驴4Bank隆驴32) Synchronous DRAM
256Mb (2M】4Bank】32) Synchronous DRAM
256Mb (2M×4Bank×32) Synchronous DRAM
|
List of Unclassifed Manufacturers
ETC
Eorex Corporation
http://
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank
512MB (64Mx72) PC2100 2-bank
512MB (64Mx64) PC2100 2-bank
512MB (64Mx72) PC1600 2-bank
256MB (32Mx72) PC1600 1-bank End-of-Life
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
256MB (32Mx72) PC2100 1-bank 56MB的（32Mx72）PC2100 1银行
|
Infineon Technologies AG
|
| K4H561638D-TC_LB0 K4H560838D-TC_LA0 K4H560838D-TC_ |
256MB
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| K4H560838D-NC_LA0 K4H560838D-NC_LA2 K4H560838D-NC_ |
256MB STSOPII
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W942508BH |
256Mb DDR
|
Winbond
|
