| PART |
Description |
Maker |
| 1N5223BT50R 1N5231BTR 1N5231BT26A 1N5231BT50A 1N52 |
surface mount silicon Zener diodes 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 16V, 0.5W Zener Diode 33V, 0.5W Zener Diode 12V, 0.5W Zener Diode 13V, 0.5W Zener Diode 10V, 0.5W Zener Diode 25V, 0.5W Zener Diode 22V, 0.5W Zener Diode 30V, 0.5W Zener Diode 15V, 0.5W Zener Diode 27V, 0.5W Zener Diode 6.8V, 0.5W Zener Diode 11V, 0.5W Zener Diode 6.0V, 0.5W Zener Diode 4.7V, 0.5W Zener Diode 8.7V, 0.5W Zener Diode 6.2V, 0.5W Zener Diode 8.2V, 0.5W Zener Diode 9.1V, 0.5W Zener Diode 7.5V, 0.5W Zener Diode 4.3V, 0.5W Zener Diode 3.9V, 0.5W Zener Diode 3.6V, 0.5W Zener Diode 2.4V, 0.5W Zener Diode 3.3V, 0.5W Zener Diode 5.6V, 0.5W Zener Diode 5.1V, 0.5W Zener Diode 2.7V, 0.5W Zener Diode 14V, 0.5W Zener Diode 18V, 0.5W Zener Diode 20V, 0.5W Zener Diode 24V, 0.5W Zener Diode 19V, 0.5W Zener Diode
|
Fairchild Semiconductor, Corp.
|
| BZX55C2V4 BZX55C39 BZX55C43 BZX55C56 BZX55C9V1 BZX |
Zeners 5.1V, 0.5W Zener Diode 7.5V, 0.5W Zener Diode 4.7V, 0.5W Zener Diode 9.1V, 0.5W Zener Diode 3.9V, 0.5W Zener Diode 6.8V, 0.5W Zener Diode 6.2V, 0.5W Zener Diode 5.6V, 0.5W Zener Diode 33V, 0.5W Zener Diode 4.3V, 0.5W Zener Diode 3.3V, 0.5W Zener Diode 10V, 0.5W Zener Diode 11V, 0.5W Zener Diode 13V, 0.5W Zener Diode 12V, 0.5W Zener Diode 8.2V, 0.5W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| 1N5919B 1N5919BRL 1N5930BRL 1N5940BRL 1N5921BRL 1N |
Zener 5.6V 3W 5% Zener 16V 3.0W 5% 3 Watt DO-41 Surmetic-30 Zener Voltage Regulators Zener 6.8V 3W 5% Zener 47V 3.0W 5% Zener 12V 3.0W 5% Zener 56V 3.0W 5% Zener 20V 3.0W 5% Zener 33V 3.0W 5% Zener Diode Zener 180V 3.0W 5% Zener 160V Zener 200V 3.0W 5% Zener 30V 3.0W 5% Zener 62V 3.0W 5%
|
ON Semiconductor
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation Toshiba Semiconductor
|
| CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD Switching Mode Power Supply Applications
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
| HZ36L HZ6L HZ12C3L HZ7L HZ11L HZ12L HZ15L HZ16L HZ |
SWITCH TACT 6MM 100GF H=4.3MM Silicon Epitaxial Planar Zener Diode for Low Noise Application Diodes>Zener
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
| TMP87C809BNG TMP87C409BNG TMP87C409BMG TMP87C809BM |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.2 to 7.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35 Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.0 to 7.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35 Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.3 to 7.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| 1N5241B-TAP 1N5261B-TAP 1N5230B-TR 1N5223B-TR 1N52 |
DIODE 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Voltage Regulator Diode Diode Zener Single 47V 5% 500mW 2-Pin DO-35 Ammo Diode Zener Single 4.7V 5% 500mW 2-Pin DO-35 T/R Diode Zener Single 2.7V 5% 500mW 2-Pin DO-35 T/R Diode Zener Single 56V 5% 500mW 2-Pin DO-35 T/R Small Signal Zener Diodes ZENER DIODE DO35-E2 - Ammo Pack Diode Zener Single 15V 5% 500mW 2-Pin DO-35 Diode Zener Single 3V 5% 500mW 2-Pin DO-35 T/R
|
Vishay Semiconductors Vishay Siliconix
|
| MIC5219-3.1BM5 MIC5219-2.5BM5 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.8 to 6.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.7 to 6.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.8 to 6.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 3.1 V FIXED POSITIVE LDO REGULATOR, 0.6 V DROPOUT, PDSO5
|
Micrel Semiconductor,Inc. Micrel Semiconductor, Inc. MICREL INC
|
| BZV48C9V1 BZV48C10 BZV48C100 BZV48C11 BZV48C110 BZ |
124 to 141V; P(tot): 5W; zener diode 104 to 116V; P(tot): 5W; zener diode 114 to 127V; P(tot): 5W; zener diode 94 to 106V; P(tot): 5W; zener diode ZENER DIODES
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] http://
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|