PART |
Description |
Maker |
STB20NM60D |
N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET
|
STMicroelectronics
|
AOK20N60 |
600V,20A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
AOT20C60P |
600V,20A N-Channel MOSFET
|
Alpha & Omega Semicondu...
|
AOT20N60 |
600V,20A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
FCB20N60F085 FCB20N60-F085 |
N-Channel MOSFET 600V, 20A, 198m
|
Fairchild Semiconductor
|
ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|甲一(c)|63AB
|
Hynix Semiconductor, Inc.
|
IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
International Rectifier
|
STGP20NB60H |
N-Channel 20A-600V- TO-220 PowerMESH IGBT(N沟道绝缘栅双极晶体管) N沟道 600V的到220 PowerMESH IGBT的(不适用沟道绝缘栅双极晶体管
|
STMicroelectronics N.V.
|
NSF206036 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-254 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 20A条(丁)|254
|
Sharma Electro Components, Inc.
|
6MBI20F-060 |
IGBT(600V 20A)
|
Fuji Electric
|
AOK20S60L |
600V 20A a MOS
|
Alpha & Omega Semicondu...
|