| PART |
Description |
Maker |
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| S4204 S8703 |
Si PIN photodiode Dual-element, plastic package photodiode
|
Hamamatsu Corporation
|
| S3096-02 S2721-02 |
Si PIN photodiode Dual-element, plastic package photodiode
|
Hamamatsu Corporation
|
| ZHMA2901 ZHMA2911 |
Diode Array Diode Array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE
Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Bourns, Inc.
Nichicon, Corp.
|
| SDM6CC-7 |
SIX ELEMENT COMMON - CATHODE SCHOTTKY ARRAY 0.2 A, 30 V, 6 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| G8909-01-15 |
InGaAs PIN photodiode array
|
Hamamatsu Corporation
|
| G8921-01 |
GaAs PIN photodiode array
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| NOP12810 |
DPI High-Speed Photodiode Array
|
ON Semiconductor
|
| PDB-C216 |
Blue Enhanced Linear Array Silicon Photodiode
|
List of Unclassifed Manufacturers
|
| SD219-51-03-301 |
Blue Enhanced Linear Array Silicon Photodiode
|
Advanced Photonix, Inc.
|
| PDB-C232 |
Blue Enhanced Linear Array Silicon Photodiode
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
