| PART |
Description |
Maker |
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M39P0R1080E4ZASE M39P0R1080E4ZASF M39P0R9080E4 M39 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| SST39LF400A SST39LF200A |
(SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Silicon Storage Technology
|
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http://
Silicon Storage Technol...
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| NAND01G-N NAND01GR4N5 NAND01GR3N6 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
