| PART |
Description |
Maker |
| STLC2592 STLC2592TR |
Bluetooth V2.1(a) EDR and RDS FM radio combo solution
|
STMicroelectronics
|
| KDS8928A |
N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 -4 A, -20 V RDS(ON) = 0.055
Dual N & P-Channel Enhancement Mode MOSFET
|
TY Semiconductor Co., L...
TY Semicondutor
|
| OP705D OP705A OP705B OP705C |
NPN Pho to tran sistor with Base-Emit ter Resistor
|
OPTEK[OPTEK Technologies]
|
| E-STLC2416 STLC2416 |
BLUETOOTH (TM) BASEBAND WITH INTEGRATED FLASH
A free-form text description of the package type.
BLUETOOTH BASEBAND WITH INTEGRATED FLASH
BLUETOOTH BASEBAND WITH INTEGRATED FLASH
|
SiliconTech, Inc.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| CGB240 |
2-Stage Bluetooth InGaP HBT Power Amplifier
2.4 to 2.5 GHz HBT Bluetooth Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| STLC2500 |
BLUETOOTH™ SINGLE CHIP
BLUETOOTH?/a> SINGLE CHIP
BLUETOOTH SINGLE CHIP
BLUETOOTH⑩ SINGLE CHIP
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
