| PART |
Description |
Maker |
| STK20C04 STK20C04-30 STK20C04-35 STK20C04-45 STK20 |
512 X 8 NON-VOLATILE SRAM, 30 ns, PDIP28
CMOS nvSRAM High Performance 512 x 8 Nonvolatile Static RAM 高性能的CMOS非易12 × 8非易失性静态RAM
|
List of Unclassifed Manufacturers
ETC[ETC]
SIMTEK
Electronic Theatre Controls, Inc.
|
| CY62148ELL-45ZSXA |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62148EV30LL-55ZSXET |
4-Mbit (512 K x 8) Static RAM
|
Cypress
|
| CY7C1049CV33 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| CY7C1020BN-12VXCT CY7C1020BN-15ZXC CY7C1020BN-12ZC |
32K x 16 Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 4.5 to 5.5 V; 32K X 16 STANDARD SRAM, 12 ns, PDSO44
32K x 16 Static RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44
32K x 16 Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 4.5 to 5.5 V;
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1012AV33-8BGC |
512 K × 24 Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
| PUMA68S16000XBI-012 PUMA68S16000XBI-015 PUMA68S160 |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, PQMA68
512 K x 32 Static RAM
|
MOSAIC
|
| HM64YLB36512BP-33 HM64YLB36512 HM64YLB36512BP-28 |
16M Synchronous Late Write Fast Static RAM (512-kword 隆驴 36-bit)
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
