| PART |
Description |
Maker |
| GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| PS22054 |
1200V/15A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| BFC13 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| BFC41 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC16 |
4TH GENERATION MOSFET
|
Seme LAB
|
| DPX-S435-15 |
4th Generation Intel? Core?Gaming platform
|
Advantech Co., Ltd.
|
| USB2226 |
4th Generation USB 2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC Corporation
|
| R4-SXDP-20FR-R1 |
4th Generation Bearing ?MTBF of 160,000 hours thanks to highly durable POM components.
|
List of Unclassifed Man...
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