| PART |
Description |
Maker |
| MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5221B |
Zeners 6.8 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3-32V Dual Operational Amplifier, Ta = 0 to 70°C; Package: Micro8™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 4000
3.9V, 0.35W Zener Diode
27V, 0.35W Zener Diode
6.8V, 0.35W Zener Diode
33V, 0.35W Zener Diode
13V, 0.35W Zener Diode
9.1V, 0.35W Zener Diode
15V, 0.35W Zener Diode
30V, 0.35W Zener Diode
16V, 0.35W Zener Diode
3.3V, 0.35W Zener Diode
20V, 0.35W Zener Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| CDLL4620 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4 |
4.3 volt zener diode
3.3 volt zener diode
5.1 volt zener diode
3.9 volt zener diode
2.4 volt zener diode
LEADLESS PACKAGE FOR SURFACE MOUNT
2-of-3 Decoder/Demultiplexer 8-US8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-SM8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-DSBGA -40 to 85
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
4.7 volt zener diode
5.6 volt zener diode
2.2 volt zener diode
3.6 volt zener diode
2.0 volt zener diode
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
|
| CMS1006 CMS10 CMS10-06 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.5 to 14.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Toshiba Semiconductor
Toshiba Corporation
|
| H11G1SR2M H11G1SR2VM H11G1TM H11G1TVM H11G2M H11G1 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.4 to 4.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| 1N5241B-TAP 1N5261B-TAP 1N5230B-TR 1N5223B-TR 1N52 |
DIODE 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Voltage Regulator Diode
Diode Zener Single 47V 5% 500mW 2-Pin DO-35 Ammo
Diode Zener Single 4.7V 5% 500mW 2-Pin DO-35 T/R
Diode Zener Single 2.7V 5% 500mW 2-Pin DO-35 T/R
Diode Zener Single 56V 5% 500mW 2-Pin DO-35 T/R
Small Signal Zener Diodes
ZENER DIODE DO35-E2 - Ammo Pack
Diode Zener Single 15V 5% 500mW 2-Pin DO-35
Diode Zener Single 3V 5% 500mW 2-Pin DO-35 T/R
|
Vishay Semiconductors
Vishay Siliconix
|
| STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
意法半导
|
| PSP-1G020-13TI PSP-1G010-13TI PSP-1G020 PSP-1G010 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.1 to 8.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.7 to 8.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.9 to 8.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.3 to 8.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
SFP Optical Transceivers
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| 1N5988 1N5993 1N5987 1N5989 1N5997 1N5996 1N6029 1 |
From old datasheet system
Axial-Leaded 500 mW Zener Diodes
SILICON 500 mW ZENER DIODES
3.3V Input to Regulated 5V Output Charge Pumps
Static Protection Wrist Grounder; Body Material:Fabric RoHS Compliant: NA
Zener Voltage Regulator Diode 8.2 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 180 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 33 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 39 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 15 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 100 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Insulating Tape; Peak Reflow Compatible (260 C):No 27 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
|
MICROSEMI CORP-LAWRENCE
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 1N3040 1N3020 1N3031 1N3050 1N3016 1N3021 1N3022 1 |
Zener regulator diode. Nom zener voltage 130 V. 1 W.
Zener regulator diode. Nom zener voltage 5.6 V. 1 W.
Zener regulator diode. Nom zener voltage 4.7 V. 1 W.
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
1.0 WATT METAL SILICON ZENER DIODES
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| NTE5296A NTE5240A NTE5241A NTE5242A NTE5243A NTE52 |
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 52.0V. Zener test current Izt = 240mA.
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 33.0V. Zener test current Izt = 380mA.
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 180.0V. Zener test current Izt = 68mA.
50 Watt Zener Diodes ±5% Tolerance
50 Watt Zener Diodes 5% Tolerance
50 WATT ZENER DIODES 【5% TOLERANCE
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 13.0V. Zener test current Izt = 960mA.
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 43.0V. Zener test current Izt = 290mA.
|
NTE[NTE Electronics]
Fujitsu, Ltd.
NTE Electronics, Inc.
|
