| PART |
Description |
Maker |
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| VII100-06P1 VIO100-06P1 VDI100-06P1 VID100-06P1 IX |
IGBT Modules: Boost Configurated IGBT Modules
2-WIRE FIELD PROGRAMMABLE W/TIN PLATING
|
IXYS[IXYS Corporation]
|
| VIO50-12P1 VII50-12P1 VDI50-12P1 VID50-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
From old datasheet system
|
IXYS[IXYS Corporation]
|
| VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MID400-12E4T |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| SKM100GAL163D SKM200GAL123D SKM400GA123D SKM300GA1 |
SEMITRANS IGBT Modules New Range SEMITRANS IGBT模块的新范围
SEMITRANS IGBT Modules New Range 100 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| SKM145GB063DN SKM145GAL063DN |
Superfast NPT-IGBT Modules 200 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| SKM195GAL066D |
Trench IGBT Modules 265 A, 600 V, N-CHANNEL IGBT
|
SEMIKRON
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
