| PART |
Description |
Maker |
| IS42S16160-7BL IS42S16160-6BLI |
256-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| IS42S32400B-6T IS42S32400B-7T IS42S32400B-6BL IS42 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| HYB39S128800FT-7 HYB39S128400FTL-7 HYB39S128400FT- |
128-MBit Synchronous DRAM 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
| HYB18H256321AF-12 |
256-Mbit x32 GDDR3 DRAM
|
Infineon
|
| HYB18T256324F-22 HYB18T256324F-16 HYB18T256324F-20 |
256-Mbit GDDR3 DRAM [600MHz]
|
INFINEON[Infineon Technologies AG]
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
| HYB39S64400AT-8 HYB39S64400AT-8B HYB39S64160ATL-10 |
64 MBit Synchronous DRAM
64Mbit Synchronous DRAM
|
Siemens
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
| HYB39S64400AT-8B HYB39S64160AT-8B HYB39S64800AT-8B |
64 MBit Synchronous DRAM
|
SIEMENS AG
|
| HYB39S64160AT HYB39S64160AT-8B HYB39S64160AT-10 HY |
64 MBit Synchronous DRAM
|
Siemens Semiconductor Group
|
| HYB39S64800AT-10 HYB39S64800AT-8 HYB39S64800AT-8B |
64 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
|
| HYB39S64XXX0CTL-8 HYB39S64400 HYB39S64400CT-7.5 HY |
64-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
