| PART |
Description |
Maker |
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| DZTA42 |
Medium Power Bipolar Transistors
|
Diodes, Inc.
|
| BD234 BD237 BD234G BD237G BD238 |
Plastic Medium Power Bipolar Transistors
|
ON Semiconductor
|
| TDA7910 TDB7910 |
MEDIUM POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIER
|
STMICROELECTRONICS[STMicroelectronics]
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体 GHz中等功率硅双极晶体管芯片（高 GHz的中等功率硅双极型晶体管
|
Agilent(Hewlett-Packard)
HIROSE ELECTRIC Co., Ltd.
|
| ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z)
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes
List of Unclassifed Manufacturers
|
| RM20TPM-H02 RM20TPM-H RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| SST4401 MMST4401 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
NPN Medium Power Transistor
|
Rohm
|
| 2SD2657 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
|
ROHM
|
| SST4403 2N4403 MMST4403 UMT4403 A5800339 |
PNP Medium Power Transistor (Switching)(PNP中等功率晶体开) 进步党中功率晶体管（开关）（民进党中等功率晶体管（开关）
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| 2SA2071 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
