| PART |
Description |
Maker |
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GT80J101 |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK152906 2SK1529 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK1529 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RJM0407JSC RJM0407JSC-00-12 |
40 V - 20 A - N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK349706 2SK3497 |
Silicon N Channel MOS Type High Power Amplifier Application
|
Toshiba Semiconductor
|
| GT60M303 EE07978 |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SK1530 E001355 |
From old datasheet system
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60M302 E001943 |
From old datasheet system
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8016-H |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
|
Toshiba Corporation
Toshiba Semiconductor
|
