| PART |
Description |
Maker |
| T9G00410 T9G00412 T9G01010 T9G01012 T9G00110 T9G00 |
Phase Control SCR (1000-1200 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（1000-1200安培平均100-2200伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| AD8253ARMZ-R71 AD8253ARMZ-RL1 AD8253ARMZ1 AD82241 |
10 MHz, 20 V/μs, G = 1, 10, 100, 1000 i CMOS? Programmable Gain Instrumentation Amplifier
10 MHz, 20 V/渭s, G = 1, 10, 100, 1000 i CMOS庐 Programmable Gain Instrumentation Amplifier
10 MHz, 20 V/楼矛s, G = 1, 10, 100, 1000 i CMOS垄莽 Programmable Gain Instrumentation Amplifier
10 MHz, 20 V/レs, G = 1, 10, 100, 1000 i CMOS㈢ Programmable Gain Instrumentation Amplifier
|
Analog Devices
|
| CMR1U-01M10 CMR1U-10M CMR1U-06M CMR1U-04M CMR1U-02 |
SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 1 AMP, 100 THRU 1000 VOLTS
1 A, 1000 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| CBR1-D100 CBR1-D010 CBR1-D020 CBR1-D040 CBR1-D060 |
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
From old datasheet system
Leaded Bridge Rectifier General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Si, NPN, RF SMALL SIGNAL TRANSISTOR
100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
UHF BAND, Si, RF SMALL SIGNAL, FET
3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
LEDtronics, Inc.
Integrated Device Technology, Inc.
Vishay Beyschlag
Air Cost Control
Mini-Circuits
Moeller Electric, Corp.
OSRAM GmbH
Cooper Hand Tools
KOA Speer Electronics,Inc.
ProMOS Technologies, Inc.
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| VSC7372 |
HawX-G16 - 16-Port 10/100/1000 Managed L2 Ethernet Switch
HAWX-G16⒙ - 16-PORT 10/100/1000 MANAGED L2 ETHERNET SWITCH
|
Vitesse Semiconductor Corporation
|
| CMR3U-10 CMR3U-01 CMR3U-02 CMR3U-04 CMR3U-06 |
ULTRA FAST RECOVERY RECTIFIER 3.0 AMP, 100 THRU 1000 VOLTS 3 A, 100 V, SILICON, RECTIFIER DIODE
ULTRA FAST RECOVERY RECTIFIER 3.0 AMP/ 100 THRU 1000 VOLTS
ULTRA FAST RECOVERY RECTIFIER 3.0 AMP, 100 THRU 1000 VOLTS 3 A, 200 V, SILICON, RECTIFIER DIODE
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| VP2014LF |
10/100/1000 BASE-TX VOICEOVER IP MODULE
|
Bothhand USA, LP.
|
| VP2009B |
10/100/1000 BASE-TX VOICEOVER IP MODULE
|
Bothhand USA, LP.
|
|
