| PART |
Description |
Maker |
| Z8036ACM Z8036ACS Z8036ACE Z8036ACMB Z8536ACMB |
Z-CIO and CIO counter/timer And parallel I/O unit, 6 MHz
Z-CIO and CIO counter/timer And parallel I/O unit, 6MHz
|
Zilog
|
| Z8036 Z8536 |
CAP POLYPROPYLENE .0015UF 50V 1%
Z-CIO AND CIO COUNTER/TIMER AND PARALLEL I/O UNIT
|
ZiLOG, Inc.
|
| IS61DDB42M36-250M3 IS61DDB42M36-250M3L IS61DDB42M3 |
72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
| K7K1636T2C K7K1618T2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
