| PART |
Description |
Maker |
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
| MT46V16M16 |
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| MT46V16M8 |
DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
| W942504CH-75 |
DDR SDRAM (Double Data Rate)
|
Winbond Electronics
|
| MT46V8M16T MT46V8M16TG-8 MT46V8M16TG-75ZL MT46V8M1 |
DOUBLE DATA RATE DDR SDRAM
|
MICRON[Micron Technology]
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6 |
512Mbit Double Data Rate (DDR) Components
|
Infineon
|
| MT46V64M8 MT46V64M8P-5BF MT46V32M16 MT46V32M16P-6T |
Double Data Rate (DDR) SDRAM
512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features
512Mb: x4, x8, x16 Double Data Rate SDRAM Features
|
Alliance Semiconductor ...
Micron Technology
|
| K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate)
8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| HYS64T32000KM-37-A HYS64T32000LM-37-A HYS64T64020L |
Double-Data-Rate-Two SDRAM Micro-DIMM 双数据速率- 2 SDRAM的微型DIMM
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA214
|
Infineon Technologies AG
|
